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| AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary The AP1098 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. It features a LOW current of 85mA, small signal gain of 25 dB, linear power of 19dBm and PAE of 28% for 802.11g under 3.3V. It can also be adjusted to smaller current(~60mA) with lower linear power (~16dBm). The AP1098 is housed in a 3 x 3 (mm), 16-pin, and QFN leadless package. The AP1098 is suitable to be used in portable, low current 802.11b and 802.11g WLAN applications. Major Applications * IEEE 802.11b/g WLAN system * WLAN Portable Devices * WLAN USB Devices * Bluetooth and other 2.4 GHz ISM Band Application * Ultra LOW Current (see below specs) * Ultra High Efficiency: PAE>28% @802.11g linear power * Gain: 25 dB Under Vc=3.3V, Vref=3V * 11g linear power: 19dBm current: 85mA * 11b linear power: 23dBm current: 165mA Pin Details Pin Number 1 2 Functional Block Diagram NC 16 NC Vcc1 Vcc1 RF IN GND FI R 15 14 1 2 Input Match re P C 3 4 5 6 7 13 12 RF OUT 11 RF OUT ry a in im l * Low Idle Current: 25mA Name Description RF_IN GND RF input. DC and RF ground. Vcc_Bias Supply voltage for bias circuit. Power detector output. 1st-stage control voltage 2nd-stage control voltage DC and RF ground. No contact (Connect to ground for better thermal dissipation.) RF output. Require external matching. The detail configuration can be found in Application Notes Supply voltage for first stage. Some bypass capacitors are needed for system application. The detail configuration can be found in Application Notes. No contact (Connect to ground for better thermal dissipation.) Dect_Out Vb1 Vb2 GND NC NC RF_OUT RF_OUT RF_OUT VCC1 VCC1 NC NC 8 9 10 11 12 13 14 15 Vcc_Bias 3 Bias 10 RF OUT AP1098 Dect_Out 4 5 Vb1 6 Vb2 7 Detector 9 NC 8 NC GND 16 QFN- 16 pin, 3 x 3 (mm) Package Base The package ground provides circuit Center Metal ground as well as heat dissipation path for the power amplifier. (c) 2003 RF Integrated Corporation. All rights reserved. Vb2 can be connected with Vb1 pin into a single Vref through external resistor. (Please refer to the AP1098 Application note) For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com RF integrated Corp. reserves the right to make any changes to the specifications without notice. 1 of 5 AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary Electrical Characteristics Parameter Freq. Total current Bias control reference current Power Gain Quiescent current EVM at Output power 19dBm 802.11b ACP-1st Side Lobe 802.11b ACP-2nd Side Lobe Input VSWR Output VSWR PAE @ linear power Symbol f Icc @ Pout=19dBm, 64QAM/54Mbps @ Pout=23dBm, CCK/11Mbps @Icq=25mA Under Vc=3.3V, Vref=3V, Ta=25C Test conditions Min. 2.4 85 165 0.7 Typ. Max. 2.5 Unit GHz mA Iref mA Gp Icq EVM @ Pout=19dBm, 64QAM/54Mbps 25 25 @ Pout=19dBm, 64QAM/54Mbps @Pout=23dBm, CCK/11Mbps Absolute Maximum Ratings Parameter DC Power Supply For Collector DC Supply Current For Collector RF Input Power Operating Ambient Temperature Storage Temperature Rating +5 280 +5 -40 to +85 -40 to +125 Unit V mA dBm X C X C FI R PAE re P C @Pout=23dBm, CCK/11Mbps in im l 3 2 -36 ry a dB mA % % dBc -56 dBc 2.5 28 37 @Pout=19dBm, 64QAM/54Mbps @Pout=23dBm, CCK/11Mbps Important Note: The information provided in this datasheet is deemed to be accurate and reliable only at present time. RF Integrated Corp. reserves the right to make any changes to the specifications in this datasheet without prior notice. AP1098 For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com (c) 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserves the right to make any changes to the specifications without notice. 2 of 5 AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary Data Charts Fig. 1 EVM & Icc vs. Pout (dBm)@3.3V (Vc1=Vc2=Vcc_bias=3.3V, Vref=3V, f=2.447GHz, 54Mbps OFDM Signal) 100 80 Icc(mA) Fig. 2 Gain, EVM,PAE vs Pout 5 4 3 EVM(%) Gain (dB) & PAE (%) 35 30 25 20 15 10 5 0 7 6 5 4 3 2 1 0 20 EVM(%) Icc (mA) 60 40 20 0 10 11 12 13 14 15 16 17 18 19 20 2 1 0 Pout (dBm) Icc(mA)@Vc=3.3V EVM(%)@Vc=3.3V, Uncorrected Signal Source (Source EVM ~0.8%) Fig. 3 1.60 Detector Output (V) 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 ACP(dBc), Gain (dB) &PAE(%) FI R Detector Output vs. Output Power re P C ry a in im l 10 11 12 13 14 15 16 17 18 Pout(dB m) PAE(%) Gain(dB) EVM(% ) 19 Fig. 4 Gain, ACP, PAE, Icc vs Pout_3.3V (With 11b CCK Modulation) 70 65 60 55 50 45 40 35 30 25 20 15 10 17 18 19 20 21 22 23 24 PAE Icc 280 260 240 220 200 180 160 140 120 100 80 60 40 25 Pout (dBm) 1st sidelobe 2nd sidelobe AP1098 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) Vdec(V)@3.3V For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com (c) 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserves the right to make any changes to the specifications without notice. 3 of 5 AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary Data Charts Fig.5 Power Gain vs. Frequency Fig. 6 Input Return Loss vs. Frequency 0 -2 -4 dB (S11) 2 2.12 2.24 2.36 2.48 2.6 2.72 2.84 2.96 25 24 23 22 Power Gain (dB) 21 20 19 18 17 16 15 -6 -8 Frequency (MHz) Gain(dB)@Pout~19dBm, Vc=3.3V Fig. 7 Output Return Loss vs. Frequency 0 -2 -4 dB (S22) -6 -8 -10 -12 2 2.12 2.24 2.36 2.48 2.6 2.72 2.84 2.96 dB (S12) FI R re P C ry a in im l -10 -12 -14 2.00 2.13 2.26 2.39 2.52 2.65 2.78 2.91 Frequency (GHz) Fig. 8 Reverse Isolation vs. Frequency -45 -46 -47 -48 -49 AP1098 -50 -51 -52 2 2.12 2.24 2.36 2.48 2.6 2.72 2.84 2.96 Frequency (GHz) Frequency (MHz) For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com (c) 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserves the right to make any changes to the specifications without notice. 4 of 5 AP1098 2.4~2.5 GHz Power Amplifier 2004.07.19 Preliminary Package Outline Top View 3.00 + 0.1 0.40 Bottom View 1.50 0.23 TYP. MARKING FI R 0.0 ~ 0.05 0.50 C Side View re P C 0.25 0.75 MAX. ry a in im l 0.5TYP. 0.23 TYP. 0.40 0.5 TYP. 3.00 + 0.1 Unit: mm SEATING PLANE 1.50 AP1098 NoteG 1. Dimension and tolerance conform to ASME Y14.5M1994. 2. Refer to JEDEC STD. MO-220 WEED-2 ISSUE B For more detailed information, please refer to AP1098 Application Note. For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com (c) 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserves the right to make any changes to the specifications without notice. 5 of 5 |
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